在计算机上解密MBM29F080A芯片的资料

　　MBM29F080A芯片简介：
　　The MBM29F080A is a 8 M-bit, 5.0 V-Only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 16 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ0 to DQ7. The MBM29F080A is offered in a 48-pin TSOP(I), 40-pin TSOP, and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.The standard MBM29F080A offers access times between 55 ns and 90 ns allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.

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　　The MBM29F080A is command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices.
　　MBM29F080A FEATURES
　　Single 5.0 V read, write, and erase Minimizes system level power requirements
　　Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
　　Superior inadvertent write protection
　　48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
　　40-pin TSOP(I) (Package Suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
　　44-pin SOP (Package Suffix: PF)
　　Minimum 100,000 write/erase cycles
　　High performance 55 ns maximum access time
　　Sector erase architecture
　　Uniform sectors of 64 K bytes each
　　Any combination of sectors can be erased. Also supports full chip erase.
　　Embedded Erase? Algorithms
　　Automatically pre-programs and erases the chip or any sector
　　Embedded Program? Algorithms
　　Automatically programs and verifies data at specified address
　　Data Polling and Toggle Bit feature for detection of program or erase cycle completion
　　Ready/Busy output (RY/BY)
　　Hardware method for detection of program or erase cycle completion
　　Low VCC write inhibit ? 3.2 V
　　Hardware RESET pin
　　Resets internal state machine to the read mode
　　Erase Suspend/Resume
　　Supports reading or programming data to a sector not being erased
　　Sector group protection
　　Hardware method that disables any combination of sector groups from write or erase operation (a sector group consists of 2 adjacent sectors of 64 K bytes each)
　　Temporary sector groups unprotection
　　Temporary sector unprotection via the RESET pin.片简介：
　　The MBM29F080A is a 8 M-bit, 5.0 V-Only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 16 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ0 to DQ7. The MBM29F080A is offered in a 48-pin TSOP(I), 40-pin TSOP, and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.The standard MBM29F080A offers access times between 55 ns and 90 ns allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.
　　The MBM29F080A is command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices.
　　MBM29F080A FEATURES
　　Single 5.0 V read, write, and erase Minimizes system level power requirements
　　Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
　　Superior inadvertent write protection
　　48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
　　40-pin TSOP(I) (Package Suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
　　44-pin SOP (Package Suffix: PF)
　　Minimum 100,000 write/erase cycles
　　High performance 55 ns maximum access time
　　Sector erase architecture
　　Uniform sectors of 64 K bytes each
　　Any combination of sectors can be erased. Also supports full chip erase.
　　Embedded Erase? Algorithms
　　Automatically pre-programs and erases the chip or any sector
　　Embedded Program? Algorithms
　　Automatically programs and verifies data at specified address
　　Data Polling and Toggle Bit feature for detection of program or erase cycle completion
　　Ready/Busy output (RY/BY)
　　Hardware method for detection of program or erase cycle completion
　　Low VCC write inhibit ? 3.2 V
　　Hardware RESET pin
　　Resets internal state machine to the read mode
　　Erase Suspend/Resume
　　Supports reading or programming data to a sector not being erased
　　Sector group protection
　　Hardware method that disables any combination of sector groups from write or erase operation (a sector group consists of 2 adjacent sectors of 64 K bytes each)
　　Temporary sector groups unprotection
　　Temporary sector unprotection via the RESET pin.

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