MOS器件公示总结

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Large Signal Operation

Drain current (saturation region)

I D = 1 2 μ C o x W L (V G S - V T H) 2 (1 + λ V D S)

Drain current (triode region)

I D = 1 2 μ C o x W L [2 (V G S - V T H) V D S - V 2 D S)

Threshold Voltage

V T H = V T H 0 + γ [2 ϕ f + V S B ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ \sqrt - 2 ϕ f ‾ ‾ ‾ ‾ \sqrt]

Threshold Voltage parameter

γ = 1 C o x 2 q ϵ N A ‾ ‾ ‾ ‾ ‾ ‾ \sqrt

Oxide capacitance

C o x = ϵ o x t o x

Transconductance

g m = μ C o x W L (V G S - V T H) = 2 I D μ C o x W L ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ \sqrt = 2 I D V o v

Transconductance efficiency

g m I D = 2 V G S - V T H

Overdrive Voltage

V o v = V G S - V T H = 2 I D μ C o x ( W / L ) ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ \sqrt

Body effect transconductance

g m b = γ 2 2 ϕ f + V S B ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ \sqrt g m = χ g m = γ k ‘ ( W / L ) I D 2 ( 2 ϕ f + V S B ) ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ ‾ \sqrt

Channel Length Modelation parameter

λ = 1 V A = 1 L e f f d X d d V D S \propto 1 L

Output resistance

r o = 1 λ I D = L e f f I D (d X d d V D S) - 1

Intrinsic Gain

g m r o = g m g d s = 1 λ 2 V o v = 2 V A V o v \propto W L I D ‾ ‾ ‾ ‾ \sqrt

Transition Frequency

f T = g m 2 π ( C g s + C g d + C g b ) \approx 3 2 1 2 π g m C g s = 3 2 μ 2 π V o v L 2

Capacitance

C s b = C s b 0 ( 1 + V S B Ψ 0 ) 0 .5

C d b = C d b 0 ( 1 + V D B Ψ 0 ) 0 .5

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